Search results for " Floating Gate"
showing 6 items of 6 documents
Silicon dosimeters based on Floating Gate Sensor: design, implementation and characterization
2020
A rad-hard monolithic dosimeter has been implemented and characterized in a standard 180 nm CMOS technology. The radiation sensor (C-sensor) is based on a Floating Gate (FG) MOS discharge principle. The output current is processed by a current-to-voltage (I/V) interface and then converted by a 5-bit flash ADC. The dosimeter is re-usable (FG can be recharged) and can detect a dose up to 1krad (Si) with a resolution of 30rad (Si) typical over temperature 0 to 85°C range. The ADC allows easy further signal processing for calibration and averaging, etc. The power consumption of C-sensor plus I/V interface is < 2mW from a 5 V power supply. The overall layout area is less than 0.25mm2. The Rad…
Tecniche di Test Innovative per la Caratterizzazione di Memorie a Gate Flottante
L’affidabilità nella ritenzione dei dati memorizzati è una delle problematiche fondamentali delle memorie flash; esse vengono normalmente testate, in produzione con procedure specifiche implementate su ATE (Automated Test Equipments), per rilevare problemi di lettura, programmazione e cancellazione; vengono inoltre provate altre procedure per identificare possibili faults e per il corretto trimming dei parametri interni. Oggi, il testing classico con ATE è supportato dalle tecniche BIST (Built-In-Self-Test), tramite le quali si prevede in progetto, all’interno dei circuiti integrati, una parte di hardware e software supplementari per permettere l’auto-test (funzionale e/o parametrico), così…
An Innovative dosimeter based on a floating Gate sensor
2019
This work describes the development of a new method for recording radiation exposure by using a passive dosimeter based on a Floating Gate CMOS sensor. The floating Gate sensors based on the MOS structure discharge allow the construction of compact and cost-efficient dosimeters, realized in VLSI CMOS technology, for use in integration mode in various applications, in particular in radiotherapy.
Can Atmospheric Neutrons Induce Soft Errors in NAND Floating Gate Memories?
2009
Atmospheric neutrons can interact with the matter inside a microelectronic chip and generate ionizing particles, which in turn can change the state of one or more memory bits [soft error (SE)]. In this letter, we show that SEs are possible in Flash memories, although with extremely low probabilities. While this problem will increase for future technologies, we do not expect SEs to be the reliability limiting factor for further floating gate scaling.
Key Contributions to the Cross Section of NAND Flash Memories Irradiated With Heavy Ions
2008
Heavy-ion irradiation of NAND flash memories under operating conditions leads to errors with complex, data-dependent signatures. We present upsets due to hits in the floating gate array and in the peripheral circuitry, discussing their peculiarities in terms of pattern dependence and annealing. We also illustrate single event functional interruptions, which lead to errors during erase and program operations. To account for all the phenomena we observe during and after irradiation, we propose an ldquoeffective cross section,rdquo which takes into account the array and peripheral circuitry contributions to the SEU sensitivity, as well as the operating conditions.
Single Event Upsets Induced by Direct Ionization from Low-Energy Protons in Floating Gate Cells
2017
Floating gate cells in advanced NAND Flash memories, with single-level and multi-level cell architecture, were exposed to low-energy proton beams. The first experimental evidence of single event upsets by proton direct ionization in floating gate cells is reported. The dependence of the error rate versus proton energy is analyzed in a wide energy range. Proton direct ionization events are studied and energy loss in the overlayers is discussed. The threshold LET for floating gate errors in multi-level and single-level cell devices is modeled and technology scaling trends are analyzed, also discussing the impact of the particle track size. peerReviewed